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Materials Research Laboratory
Materials Science and Engineering: Interfaces
- Surface/Interface Diffraction Using Synchrotron Radiation
- Atomistics of Growth and Transport at Metal and Semiconductor Surfaces
^ Surface/Interface Diffraction Using Synchrotron Radiation
H. Chen,* T. C. Chiang,* H. Hong, Z. Wu
State of Illinois; IBHE-HECA; U.S. Department of Energy, DE-FG02-91ER45439
(In cooperation with the Frederick Seitz Materials Research Laboratory)
The objective of this project is to use surface-interface sensitive x-ray diffraction scattering techniques, such as grazing incidence diffraction, scattering, or fluorescence, specular reflectivity, standing and evanescent wave experiments, and truncation-rod experiments (all of which require the use of the synchrotron radiation) to examine various materials systems of scientific and technological importance. Some specific areas of investigation are studies of the reconstructed structure, stress fields, relaxations, roughness, and phase transitions of single-crystal surfaces and interfaces such as Ag/Si(111), Ge/Si, As/Si, Sn/Si, C60/Si, Cu/Al2O3, SnO2/Al2O3, GaN/Al2O3. Researchers are also studying the dynamical structural and compositional evolution associated with film growth, melting, solidification, passivation, and corrosion.
^ Atomistics of Growth and Transport at Metal and Semiconductor Surfaces
G. Ehrlich,* S. Koh, K. Kyuno, S. C. Wang
U.S. Department of Energy, DE-FG02-91ER45439
The individual atomic events contributing to the growth of crystals and films are being explored on the atomic level. Through the use of the field ion microscope, single atoms are visualized, and processes such as condensation, diffusion, nuclearion, and incorporation into the lattice are examined quantitatively to reveal how structure and chemical composition affect growth processes.
