^ Metal-Semiconductor Interface Structure and Interface Bonding J. M. Zuo,* Y. F. Shi, B. Q. Li Department of Energy, DE-FG02-91ER45439; University of Illinois
(In cooperation with the Frederick Seitz Materials Research Laboratory)
Researchers are developing novel electron beam characterization techniques to determine the structure and potential of buried interfaces. The approach is to take advantage of the nanometer-size electron probe and the strong interaction of electrons and matter in transmission and reflection mode to image and characterize the structure of interfaces and to measure the details of interfacial potential and their dependence on the semiconductor doping. The goal is to relate the interfacial structures with the electrical properties of metal-semiconductor interfaces.
