^ Epitaxial Regrowth of Amorphous Material in Semiconductor Systems I. M. Robertson,* I. Jencic, E. Hollar U.S. Department of Energy, DE-FG02-91ER45439
(In cooperation with the Frederick Seitz Materials Research Laboratory)
Ion implantation is used extensively in the semiconductor industry to introduce dopants. The accompanying damage must be removed before devices can be activated. The focus of this effort is on understanding the mechanisms of solid-phase epitaxial crystallization of amorphous material in simple and compound semiconductors. The regrowth process can be stimulated by means of an energetic electron beam, which allows, through variation of the electron energy, the role of defects created in the crystalline material (interstitials and vacancies) or interface defects (dangling bonds or charged kinks) to be assessed directly.
