The sol-gel processing route was used to synthesize thin layers of various compositions in the Pb(Zr;yxTi;i1 -x )O;i3 system. Low-temperature crystallization behavior is believed to be influenced by local order and the coordination of the species in the starting precursor structure. The aim of this research was to understand how structure evolves through drying, thermolysis, densification, and crystallization. The observed transformation from molecular level heterogeneity at lower temperatures to intermediate range order, and eventually to the long-range ordered perovskite structure at higher temperatures, was determined by EXAFS spectroscopy.

To minimize the size of electronic components, a great deal of research has been carried out to develop new materials with higher dielectric constants. In addition to the demand for smaller electronic components, the need for Pb-free dielectric materials is also a major concern. Because of its high electric-field strength and good compatibility with microelectronic processing, Ta;i2O;i5 is widely used as an alternative to SiO;i2 for dielectric layers in thin-film capacitors. In addition, the dielectric constant can be increased by addition of Ti and Zr.