This program is to study MSM and PIN detectors and their integration with transimpedance amplifiers. The baseline approach for a short wavelength 0.85 ;gmm MSM detector will use direct ion-implanted GaAs MESFETs to achieve a bandwidth of 20 GHz. The baseline approach for long wavelength (1.3-1.6 ;gmm) detectors will use junction FET and PIN approaches. The process and design rules will be established for high-speed ICs.

This project has contributed to the study of BKBO and YBCO film characterization at microwave and terahertz frequencies. A parallel-plate resonator (10 GHz) was built to characterize sheet resistance in the microwave frequency. A noncontact coherent time-domain spectroscopy (THz) was used to characterize real and imaginary parts of conductivity. An on-wafer cryogenic microwave probing technique (1-40 GHz, 15-300°K) is employed to establish patterned film scattering parameter. This work also aims to development engineering model parameters using a GHz on-wafer probe technique.

This project is a joint effort with Northrup for developing 0.25 ;gmm gate and 0.1 ;gmm gate GaAs FET-based technology for the application in monolithic millimeter wave ICs (MMWICs). Based on the high-frequency device characterization, an equivalent circuit model will be generated. This model will then be used for MMWIC design. The fabrication of the MMWICs will be demonstrated.

We will design and fabricate MOCVD-grown, doped channel HFETs and InGaP and AlGaAs HBTs. We will characterize these devices and optimize their performance for 24- to 77-GHz applications.

This project performs the design and fabrication of an RF front end (400-700 MHz) fully tunable receiver system. We are working closely with the Mayo Foundation MIT-Lincoln Lab and DARPA to build two brassboard RF receiver front ends for digital radar applications.

This work is aimed at developing 0.1 ;gmm gate GaAs MESFETs for low-cost millimeter-wave IC. f;zt = 110 GHz was achieved; a noise figure less than 0.8 dB was measured at 18 GHz. This work will enhance cost-effective millimeter-wave IC technology.

This program is to study the fundamental speed difference of 2-DEG and 3-DEG FETs. We will investigate the fundamental issues to improve or degrade the speed performance of device operation. Furthermore, we will determine the reduction of 1-DEG and 0-DEG in FETs device performance and the fundamental speed limitation of different gate lengths of InGaAs FETs.

We will investigate the performance of MOCVD grown P-HEMT and HEMT technology and its performance comparison between MESFETs and MBE-grown HEMTs.

The objective of this research project is the characterization and experimental determination of high-field transport properties in an InGaAs alloy system that will result in the establishment of a fundamental speed limitation of InGaAs FETs.

This project aims to reduce the minimum noise figure on the direct ion-implanted self-aligned GaAs MESFETs based on the design of experiments in terms of dose and gate overlay.

This project studies the design rule of MCM using a superconductor as an interconnect line. Loss and phase delay are compared between gold and the superconductor line. Bit-error-rate and crosstalk will also be examined.

This project is aimed at the design and fabrication of 20-GHz OEIC receivers. Long-wavelength 15-GHz PIN detectors are designed and fabricated using InGaAs/InP from G. E. Stillman's group. The 17-GHz transimpedance amplifier is designed and fabricated by M. Feng's group. The PIN will be flip-chip bonded to a transimpedance amplifier.

This project is a joint development effort between UIUC and Northrop on millimeter-wave IC chip sets for IVHS. We will design transmitter, receiver, mixer, and oscillator millimeter-wave ICs using co-planar technology. The mask and fabrication will use UIUC ion implanted, superlow-noise GaAs MESFETs and a monolithic IC process.

This project is a follow-up of the TRP/DARPA contract based on the success of the University of Illinois 24-GHz and 38-GHz GaAs MESFET MMIC for LNA and VCO. The new contract is aimed at low-cost implementation of a 0.1 ;gmm gate GaAs MESFET and MMIC by direct ion implantation for 77-GHz LNA and VCO collision avoidance radar.

This project aims to establish a useful SPICE model for HBT integrated circuits application. Our approach is based on 45-MHz to 50-GHz bias-dependent microwave data collection on an HBT device using HP-ICCAP. Temperature-dependent microwave data collection will be included in the model.

This project is aimed at the technology transfer of the University of Illinois 0.25 ;gmm gate GaAs MESFET for 24-GHz and 38-GHz MMICs for LNA and VCO to M/A-Com. for low-cost production.

This project is aimed at design of 3 Gbit/s for an 8-bit ADC. Our first goal is to design the subcircuits library of comparator, sample, and hold circuit and O;gS design of an ADC.

This project is to set up an HBT reliability test. HBT reliability has become a major issue because of hetero structure interface and fast diffuse p-type impurities in both InP- and GaAs-based HBTs. We will test HBT devices from Rockwell, Hughes, and TRW for the basic failure mechanism.

This project is aimed at hybrid integration of a PIN/GaAs transimpedance amplifier at 20 GHz operation. The monolithic IC is involved in design and fabrication of 4-channel OEIC receivers using GaAs MESFET technology.

This program is aimed at developing infrared detector technology in the 3 to 5 ;gmm and 8 to 12 ;gmm windows. The application involves the next generation of satellite sensors and thermal imagers. The approach uses a quantum-well detector and its intersubband transitions using AlGaAs/GaAs and InGaAs/InP material systems. The spectral response, dark current, quantum efficiency, and noise are characterized using FTIR and diode characteristics. A device model will be generated to predict all the detector parameters.

This project is aimed at developing low-cost ion-implanted GaAs MESFET technology for 38.5 GHz LNA, PA, oscillator, and mixer.