This program involves fundamental studies of the electronic properties of heterostructure electronic materials grown by metalorganic chemical vapor deposition (MOCVD), studies of devices made from these materials, and extension of these studies to integrated optical and electronic devices. Two specific areas of interest for this research are continued development of MOCVD-grown real-space transferred electron devices and other electronic devices, and development of multiterminal integrated laser structures, in which monolithic drive or modulation electronic devices are incorporated.

This program involves development of semiconductor lasers suitable for use in integrated optoelectronics. Projects include integration of strained layer InGaAs-AlGaAs metal-insulator-semiconductor FETs (MISFETs) monolithically integrated with a cleaved facet ridge-waveguide laser, development of new integrable laser structures designed specifically to operate without conventional cleaved facets and make effective use of the wafer real estate, extensions of the ridge waveguide distributed feedback laser (DFB), conventional distributed feedback lasers, hole coupled or parasitically coupled totally internally reflecting (TIR) lasers, and the use of depressed cladding and other beam expansion concepts in index-guided waveguide structures.